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We have light boron-doping monocrystalline silicon ingot and light phosphorus-doping monocrystalline silicon ingot. Once the ingot is fully-grown, it is ground to a rough size diameter a little larger than the desired diameter of the finished silicon wafer. The ingot is then given a notch or flat to indicate its orientation, depending on the wafer diameter, customer specifications, or SEMI Standards. Once it has passed a number of inspections, the ingot is sliced into wafers.

Type	Dopant	Diameter (mm)	Resistivity Range   (ohm.cm)
P	Boron	100/125/150/200/300/400	0.0006~200
N	Phosphorus	100/125/150/200/300/400	0.0011~60